Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-beta-Ga2O3 MISFETs----上海高等研究院

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Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-beta-Ga2O3 MISFETs

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论文题目: Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-beta-Ga2O3 MISFETs
作者: Li, Xiao-Xi; Sun, Yu; Zeng, Guang; Li, Yu-Chun; Zhang, Rui; Sai, Qing-Lin; Xia, Chang-Tai; Zhang, David Wei; Yang, Ying-Guo; Lu, Hong-Liang
刊名: JOURNAL OF PHYSICAL CHEMISTRY LETTERS
出版年: 2022 卷: 13 文献号: 1948-7185
关键词:
Li, Xiao-Xi; Sun, Yu; Zeng, Guang; Li, Yu-Chun; Zhang, Rui; Sai, Qing-Lin; Xia, Chang-Tai; Zhang, David Wei; Yang, Ying-Guo; Lu, Hong-Liang
摘要:
: beta-Ga2O3 is considered an attractive candidate for next-generation high-power electronics due to its large band gap of 4.9 eV and high breakdown electrical field of 8 MV/cm. However, the relatively low carrier concentration and low electron mobility in the beta-Ga2O3-based device limit its application. Herein, the highquality beta-Ga2O3 single crystal with high doping concentration of similar to 3.2 x 1019 cm-3 was realized using an optical float-zone method through Ta doping. In contrast to the SiO2/beta-Ga2O3 gate stack structure, we used hexagonal boron nitride as the gate insulator, which is sufficient to suppress the metal-insulator-semiconductor (MIS) interface defects of the beta-Ga2O3-based MIS field-effect transistors (FETs), exhibiting outstanding performances with a low specific on-resistance of similar to 6.3 m Omega middotcm2 , a high current on/off ratio of similar to 108 , and a high mobility of similar to 91.0 cm2 /(V s). Our findings offer a unique perspective to fabricate high-performance beta Ga2O3 FETs for next-generation high-power nanoelectronic applications

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中国科学院上海高等研究院